OPTIMIZATION OF THERMAL-ELECTRIC TRANSPORT OF THE INTERFACE IN THE Cdte/Cds – Bi₂Te₃/Sb₂Te₃ MONOLITHIC SYSTEM
DOI:
https://doi.org/10.37547/ijasr-05-12-01Keywords:
Monolithic integration, nano-interface, h-BN, AlNAbstract
This article is aimed at an in-depth analysis of the thermal-electrical transport processes that occur when CdTe/CdS-based photovoltaic (PV) layers and Bi₂Te₃/Sb₂Te₃ thermoelectric (TE) modules are combined into a single monolithic structure. Excess heat generated in PV elements can be converted into electrical energy directly through the TE module, however, factors such as diffusion between materials, thermomechanical stress, and high thermal resistance of the interface reduce the efficiency of such integration. Therefore, it is proposed to use nano-thick, thermally conductive and electrically insulating layers such as h-BN or AlN as interfaces. During the study, the thickness, thermal resistance, diffusion-limiting properties, and energy bandgap compatibility of these nano-interfaces were evaluated through computer modeling. The results obtained showed that the correct choice of interface can reduce heat losses in PV–TE systems, increase the power generation capacity of the TE module, and improve the overall efficiency of the hybrid system. Thus, the study scientifically confirms that interface engineering is one of the key factors for high efficiency and stable operation in monolithic PV–TE energy systems.
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