ANOMALOUSLY HIGH DIOTOVOLTAIC EFFECT IN THIN FILMS OF GALLIUM ARSENIDE
DOI:
https://doi.org/10.37547/ijasr-03-09-24Keywords:
APV element, amnisatron evaporation, potential barriersAbstract
The current-voltage characteristics of APN elements manufactured by vacuum anisotron evaporation have been studied. It was found that there are inhomogeneities in a series of successive p–n–p transitions.... The dependence of the current-voltage characteristics of oxygen-enriched environments on temperature and illumination was tested.
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