In this work, a study of the anomalous photovoltaic effect (APhN - effect) in crystalline dielectrics was carried out. The nature of the effect is explained according to polarization processes. It is shown that in dielectrics, due to high thermal ionization photoionization energies, impurity complexes of the cluster type are mainly involved in the formation of the effect. Segregation of cluster complexes, apparently, under the action of polarized (coherent) light is activated and stimulates the formation of electrode domain walls. The electrons and holes separated by light will accumulate only in the domain walls, thus creating an elementary voltage (on the order of KT/q) on each domain wall. These elementary stresses are summed up at macro distances and lead to an abnormally high voltage.

APhN - effect, polarization, photo, thermal ionization

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