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International Journal of Advance Scientific Research SCIENTIFIC IDEAS. INTERNATIONAL PERSPECTIVES.
ISSN 2750-1396 12 issues per year · Monthly
Crossref DOI: 10.37547/ijasr
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Articles Published:

ANALYSIS OF STUDYING THE STRUCTURE OF EPITAXIAL IRON FILMS ON GALLIUM ARSENIDE Fe/GaAs

Vol. 3 No. 01 (2023): Volume03 Issue01 Pages 23-28
Authors
  • Odinakhan Rayimjonova
    Phd, Docent, Fergana Branch Of Tashkent University Of Information, Technologies Named After Muhammad Al-Khwarizmi, Fergana, Uzbekistan
  • Sherali Toshpulatov
    Assistant, Fergana Branch Of Tashkent University Of Information, Technologies Named After Muhammad Al-Khwarizmi, Fergana, Uzbekistan
  • Gulrukhsor Ergasheva
    Student, Fergana Branch Of Tashkent University Of Information, Technologies Named After Muhammad Al-Khwarizmi, Fergana, Uzbekistan
  • Dilshod Tulanov
    Teacher, Academic Lyceum Under Namangan Institute Of Engineering And Construction, Namangan, Uzbekistan
DOI 10.37547/ijasr-03-01-05 ↗
RESEARCH OVERVIEW

Abstract

The anisotropy in thin films coincides with the crystallographic direction of an increase in the thickness of the iron layer. The value of the cubic anisotropy constant decreases. In this case, the value of the uniaxial anisotropy constant, on the contrary, increases. The dilution of the semiconductor matrix with iron atoms is also noted, and the formation of Fe-Ga or Fe-As compounds is assumed. An analysis of the surface sensitivity of the spectra of As and Ga shows that As is more easily mixed with Fe than with Ga.

Keywords

  • Thin films
  • electron beam epitaxial
  • uniaxial and cubic anisotropy
  • ferromagnetic resonance
SOURCES & CITATIONS

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